ST2302M n channel enhancement mode mosfet 3.6a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2302M 2007. v1 1 description the ST2302M is the n-channel logic enhancem ent mode power field effect transistor are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: process code ordering information part number package part marking ST2302Msrg sot-23 s02ya process code : a ~ z ; a ~ z ST2302Msrg s : sot-23 ; r : tape reel ; g : pb ? free feature z 20v/3.6a, r ds(on) = 90m-ohm (typ.) @vgs = 4.5v z 20v/3.1a, r ds(on) = 130m-ohm @vgs = 2.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-23 package design 3 1 2 d g s 3 1 2 s02ya
ST2302M n channel enhancement mode mosfet 3.6a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2302M 2007. v1 2 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d 3.2 2.6 a pulsed drain current i dm 10 a continuous source current (diode conduction) i s 1.6 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 100 /w
ST2302M n channel enhancement mode mosfet 3.6a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2302M 2007. v1 3 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.5 1.2 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 10 ua on-state drain current i d(on) v ds R 5v,v gs =4.5v v ds R 5v,v gs =2.5v 6 4 a drain-source on-resistance r ds(on) v gs =4.5v,i d =3.6a v gs =2.5v,i d =3.1a 0.09 0.13 forward transconductance g fs v ds =5v,i d =3.6v 10 s diode forward voltage v sd i s =1.6a,v gs =0v 0.85 1.2 v dynamic total gate charge q g 5.4 10 gate-source charge q gs 0.65 gate-drain charge q gd v ds =10v v gs =4.5v i d ? 3.6a 1.4 nc input capacitance c iss 340 output capacitance c oss 115 reverse transfer capacitance c rss v ds =10v v gs =0v f=1mh z 33 pf 12 25 turn-on time t d(on) tr 36 60 34 60 turn-off time t d(off) tf v dd =10v r l =5.5 i d =3.6a v gen =4.5v r g =6 10 25 ns
ST2302M n channel enhancement mode mosfet 3.6a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2302M 2007. v1 4 typical characterictics (25 unless noted)
ST2302M n channel enhancement mode mosfet 3.6a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2302M 2007. v1 5 typical characterictics (25 unless noted)
ST2302M n channel enhancement mode mosfet 3.6a 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2302M 2007. v1 6 sot-23 package outline
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